Core Technology

Principled deposition technology

A combination of vertical gas flow and high-speed wafer rotation forms a uniform, ultra-thin boundary layer(*) above the wafer.

A thin boundary layer easily takes source gas in and exhausts HCl gas with centrifugal force.

As a result, the following reaction is observed, leading to 20 to 30% of high gas conversion rate which brings high-speed growth.

  1. SiHCl3 → SiCl2* ↓ + HCl ↑ SiCl2* generated through thermal decomposition is absorbed onto the wafer surface.
  2. SiCl2* + H2 → Si ↓ + 2HCl ↑ Single crystal silicon grows on the wafer surface.

(*)Boundary layer is an area in the thickness direction where the deposition reaction occurs above the wafer surface.

Advantages of High-speed Wafer Rotation

Faster rotation brings higher growth rate.

Gas conversion rate changes according to wafer rotation speed. As a result, epi growth rate becomes higher with faster rotation.

System Specifications

Wafer size 200mmφ
Heating method Resistance heating from backside
Process temperature 800 - 1,150℃
Rotation speed 300 - 900rpm
Pressure 93(700) - 13.3(100)kPa(Torr)
Gases SiHCl3, SiH2Cl2, H2, HCl
Outer dimension (Main frame) 1,396mm(W) * 2,276mm(D) * 2,350mm(H)
Weight (main unit) About 2,300 kg