A combination of vertical gas flow and high-speed wafer rotation forms a uniform, ultra-thin boundary layer(*) above the wafer.
A thin boundary layer easily takes source gas in and exhausts HCl gas with centrifugal force.
As a result, the following reaction is observed, leading to 20 to 30% of high gas conversion rate which brings high-speed growth.
(*)Boundary layer is an area in the thickness direction where the deposition reaction occurs above the wafer surface.
Gas conversion rate changes according to wafer rotation speed. As a result, epi growth rate becomes higher with faster rotation.
|Heating method||Resistance heating from backside|
|Process temperature||800 - 1,150℃|
|Rotation speed||300 - 900rpm|
|Pressure||93(700) - 13.3(100)kPa(Torr)|
|Gases||SiHCl3, SiH2Cl2, H2, HCl|
|Outer dimension (Main frame)||1,396mm(W) * 2,276mm(D) * 2,350mm(H)|
|Weight (main unit)||About 2,300 kg|