EPIREVO™ S6 6” single-wafer SiC Epitaxial Reactor

EPIREVO S6 Single Wafer Epitaxial Reactor

EPIREVO™ S6 combines improved SiC power device quality with low cost production. The EPIREVO™ S6 realizes high productivity through its 6 inch capability, greater than 50µm/hour growth rate and high temperature wafer handling.

Features

  • High productivity

    • Continuous growth : 150 µm film.
    • High growth rate: > 50 µm/hour.
  • Excellent wafer temperature uniformity

    • 4” wafer : < 1 ℃
    • 6” wafer : < 2 ℃
  • Highly quality

    • Excellent uniformity(σ/mean)
       Thickness uniformity : < 2 %
      (E.E=3 mm)
       Doping uniformity : < 4 %
      (E.E=6 mm)
    • Low defect density: 0.02/cm-2
  • Auto wafer transfer by robot

    • Cassette to Cassette wafer transfer
ページの上部へ