EPIREVO™ G8 8” single-wafer GaN-on-Si MOCVD

EPIREVO G8 Single Wafer MOCVD

The EPIREVO™ G8 MOCVD system deposits high quality GaN films at high growth-rate on 8 inch Si substrates. EPIREVO™ G8 enables low cost LED production as well as high performance power-device applications, both of which help Society reduce its carbon foot print.

Features

  • High productivity

    • High GaN growth rate : > 9 µm/hour
    • Fast temperature ramp rate : > 200 ℃/minute
  • Highly quality

    • 8 inch wafer temperature uniformity : < 2 ℃
    • 1100 ℃ Slip free, Si melt-back free
  • Low cost

    • High TMG utilization ratio: > 20 %
    • High system uptime by In-Situ cleaning
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